Electrically Dynamic Configurable WSe₂ Transistor and the Applications in Photodetector

Non-destructive and reversible modulations of polarity carrier concentration in transistors are essential for complementary devices. The fabricated multi-gated WSe2 devices obtain dynamic electrostatic field induced electrically configurable functions demonstrate as diode with high rectification ratio 4.1 × 105, well n- p-type inverter voltage gain 19.9 12.1, respectively. Benefiting from the continuous band alignment modulation channel underneath dual gates, exhibit high-performance photodetection wide spectral range. yield photo-responsivity (5.16 A W−1) large Ilight/Idark (1 105). Besides, local gate fields accelerate separation photo-induced carriers, leading to fast response without persistent current. This strategy takes advantage simplified design continues deliver integrated circuits density. superior electrical characteristics great potency domain future optoelectronics.